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°ßÀû¿äûÇϽñ⠹ٶø´Ï´Ù. 2008. 11. 14.
ALUMINUM
NITRIDE MATERIAL PROPERTIES
CHARACTERISTICS
|
CRITERIA
|
½ÃÇè ¹æ¹ý
|
°¡°Ý
¿¹½Ã
|
¿Àüµµ¼º
|
170 W/m-K (min)
|
Laser Diffusivity
|
100mm*100mm*1mm/t 30°³ ±âÁشܰ¡
162300¿ø/ea/
|
190 W/m-K (min)
|
Laser Diffusivity
|
|
200 W/m-K (min)
|
Laser Diffusivity
|
|
¿ ÆØÃ¢ |
4.6 x 10 -6 in/in °C typical |
|
|
Àý¿¬¼º |
< 1013 Ohm-cm |
Pressure Contact with Electrometer |
|
Dielectric Loss Tangent |
0.005 max @ 1kHz |
Liquid Immersion |
|
À¯Àü »ó¼ö |
8.9 +/- 1.0 |
Liquid Immersion |
|
À¯Àü ·Â |
14 kV/mm typical |
Oil Immersion |
|
¹Ðµµ |
3.30 g/cc |
Archimedes |
|
±â°èÀû ÀÀ·Â |
Æò±Õ ÃÖ¼Ò 35 ksi |
Biaxial flexure |
|
Àû¿ë
¿ëµµ
|
Ç¥ÁØ
°ø±Þ ±Ô°Ý
|
RF/Microwave
Components
|
µÎ²² = 0.25mmºÎÅÍ
3.175mm±îÁö
|
Power transformers and
transistors
|
±æÀÌ
¶Ç´Â Æø = 114mm x 114mm±îÁö
|
Optical Switches
|
Ç¥¸éó¸® = 30 µin. max.
|
Laser Diode
sub-mounts
|
ÁÖ¹®ÀÚ
±Ô°ÝÀÇ »ý»ê °ø±Þ
|
Metallization
|
±â°è°¡°ø/±¤Åó»±â/±Ý¼ÓÀÔÈ÷±â
µî
|
High frequency microelectronic
packages
|
µµ¸é°ú
Tollerance¸¦ ¸í½ÃÇØ¼ °ßÀû¿äû ¹Ù¶ø´Ï´Ù
|
|